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LBC807-40LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LBC807-40LT1GLRC41320Yes

LBC807-40LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The LBC807-40LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are the factual specifications, descriptions, and features:

Manufacturer: ON Semiconductor

Part Number: LBC807-40LT1G

Transistor Type: PNP

Package: SOT-23 (SC-59, TO-236AB)

Key Specifications:

  • Collector-Emitter Voltage (VCEO): -45V
  • Collector-Base Voltage (VCBO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -500mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 250–600 (at IC = -100mA, VCE = -1V)
  • Transition Frequency (fT): 100MHz
  • Operating Temperature Range: -55°C to +150°C

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Suitable for switching and amplification applications
  • Compact SOT-23 package for space-constrained designs

Applications:

  • General-purpose amplification
  • Switching circuits
  • Signal processing
  • Driver stages

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

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