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2SA105 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA105789Yes

2SA105** is a PNP silicon transistor manufactured by **Toshiba**.

The 2SA105 is a PNP silicon transistor manufactured by Toshiba. Below are the factual specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Material: Silicon (Si)
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -150mA
  • Power Dissipation (Ptot): 300mW
  • Junction Temperature (Tj): 125°C
  • DC Current Gain (hFE): 120 - 820 (at VCE = -6V, IC = -2mA)
  • Transition Frequency (fT): 80MHz (Typical)
  • Package Type: TO-92 (Plastic Encapsulation)

Descriptions:

  • The 2SA105 is a general-purpose PNP transistor designed for amplification and switching applications.
  • It is suitable for low-power circuits due to its moderate current and voltage ratings.
  • The transistor is commonly used in audio amplifiers, signal processing, and driver stages.

Features:

  • High DC Current Gain (hFE) for improved amplification.
  • Low Noise performance, making it suitable for audio applications.
  • Compact TO-92 Package, allowing easy PCB mounting.
  • Reliable Silicon Construction ensures stable operation.

This information is based on the manufacturer's datasheet. For exact performance characteristics, refer to the official Toshiba 2SA105 datasheet.

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