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FQP4N90C Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FQP4N90CONSEMI 1695Yes

900V N-Channel Advance Q-FET C-Series

The FQP4N90C is an N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 900V
  • Continuous Drain Current (ID): 4A (at 25°C)
  • Pulsed Drain Current (IDM): 16A
  • Gate-Source Voltage (VGS): ±30V
  • Power Dissipation (PD): 190W (at 25°C)
  • On-Resistance (RDS(on)): 4Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 500pF (typical)
  • Total Gate Charge (Qg): 18nC (typical)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: TO-220

Descriptions:

  • The FQP4N90C is a high-voltage MOSFET designed for switching applications.
  • It features low gate charge and fast switching performance.
  • Suitable for power supplies, inverters, and motor control circuits.

Features:

  • High Voltage Capability: 900V breakdown voltage.
  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching: Optimized for high-efficiency applications.
  • Avalanche Energy Rated: Ensures robustness in inductive load conditions.
  • TO-220 Package: Provides good thermal performance.

This MOSFET is commonly used in high-voltage power conversion and switching applications.

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