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The IRF630A is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are the factual details regarding its specifications, descriptions, and features:

Manufacturer:

• FAI/SEC (Fairchild Semiconductor)

Specifications:

• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 200V
• Continuous Drain Current (I_D): 9.3A (at 25°C)
• Pulsed Drain Current (I_DM): 37A
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 75W (at 25°C)
• On-Resistance (R_DS(on)): 0.4Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 2-4V
• Input Capacitance (C_iss): 700pF (typical)
• Output Capacitance (C_oss): 150pF (typical)
• Reverse Transfer Capacitance (C_rss): 50pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 55ns (typical)
• Operating Junction Temperature (T_J): -55°C to +150°C

Package:

• TO-220AB (Through-Hole Package)

Descriptions and Features:

• Designed for high-speed switching applications.
• Low gate charge for improved efficiency.
• Avalanche energy specified for ruggedness in inductive load applications.
• Fast switching performance.
• Suitable for power supplies, motor control, and DC-DC converters.
• Lead-free and RoHS compliant.

This information is based on the manufacturer's datasheet and technical documentation.