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LMBT3904LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
LMBT3904LT1G	LRC	106620	Yes

LMBT3904LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor**.

The LMBT3904LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

Type: NPN BJT
Collector-Emitter Voltage (V_CE): 40 V
Collector-Base Voltage (V_CB): 60 V
Emitter-Base Voltage (V_EB): 6 V
Continuous Collector Current (I_C): 200 mA
Total Power Dissipation (P_D): 225 mW
DC Current Gain (h_FE): 100 – 300 (at I_C = 10 mA, V_CE = 1 V)
Transition Frequency (f_T): 300 MHz
Operating Temperature Range: -55°C to +150°C

Package:

SOT-23 (TO-236AB) surface-mount package

Features:

Designed for general-purpose amplification and switching applications
High current gain
Low noise performance
Suitable for high-speed switching

This transistor is commonly used in signal amplification, switching circuits, and other low-power applications.

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