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LMBT4403LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
LMBT4403LT1G	LRC	106700	Yes

LMBT4403LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor**.

The LMBT4403LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

Transistor Type: PNP
Maximum Collector-Base Voltage (V_CB): -40V
Maximum Collector-Emitter Voltage (V_CE): -40V
Maximum Emitter-Base Voltage (V_EB): -5V
Continuous Collector Current (I_C): -600mA
Total Power Dissipation (P_D): 225mW
DC Current Gain (h_FE): 100 to 300 (at I_C = -150mA, V_CE = -1V)
Transition Frequency (f_T): 200MHz
Package Type: SOT-23

Features:

High current gain
Low saturation voltage
Fast switching speed
Small SOT-23 package for space-saving designs

This transistor is commonly used in switching and amplification applications.

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