Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > others05 > MMBT3906TT1G

MMBT3906TT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT3906TT1GONSEMI231000Yes

MMBT3906TT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCE): -40V
  • Collector-Base Voltage (VCB): -40V
  • Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -200mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100-300 @ 10mA
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed switching.
  • RoHS compliant and lead-free.

Features:

  • High current gain bandwidth product.
  • Low saturation voltage.
  • Small surface-mount package for space-constrained applications.

For detailed electrical characteristics, refer to the official datasheet from ON Semiconductor.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • VN0610L ,190,TO92

    Part Number:** VN0610L **Manufacturer:** VISHA ### **Specifications:** - **Type:** N-Channel Enhancement Mode MOSFET - **Drain-Source Voltage (VDS):** 60V - **Continuous Drain Current (ID):** 6A - **Pulsed Drain Current (IDM):** 24A - **P

  • CD74HCT03E ,176,DIP14

    CD74HCT03E** is a high-speed CMOS logic IC that integrates four independent 2-input NAND gates with open-drain outputs.

  • H4002DG ,206,DIP40

    H4002DG** is a high-voltage, high-speed power MOSFET manufactured by **MNC (Microsemi Corporation)**.

  • 7581-ADJDD,AMS,95,TO263

    AT91SAM7S64AU-001,ATMEL,95,QFP

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales