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MMBTA06LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBTA06LT1GONSEMI123000Yes

MMBTA06LT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBTA06LT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (V_CBO): -80V
  • Maximum Collector-Emitter Voltage (V_CEO): -80V
  • Maximum Emitter-Base Voltage (V_EBO): -5V
  • Continuous Collector Current (I_C): -500mA
  • Power Dissipation (P_D): 225mW
  • DC Current Gain (h_FE): 100 to 300 (at I_C = -10mA, V_CE = -1V)
  • Transition Frequency (f_T): 100MHz
  • Operating Temperature Range: -55°C to +150°C

Package:

  • SOT-23 (TO-236AB) (3-pin surface-mount package)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed switching circuits.
  • RoHS compliant and lead-free.

Features:

  • High voltage capability (up to -80V).
  • Low saturation voltage for efficient switching.
  • Compact SOT-23 package for space-constrained designs.
  • Suitable for automated assembly processes.

This transistor is commonly used in amplifiers, signal processing, and switching circuits in consumer electronics, industrial applications, and automotive systems.

For detailed electrical characteristics and performance curves, refer to the official ON Semiconductor datasheet.

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