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CBC337-25 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
CBC337-25200Yes

CBC337-25** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by various semiconductor companies.

The CBC337-25 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by various semiconductor companies. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 800mA (max)
  • Power Dissipation (Ptot): 625mW
  • DC Current Gain (hFE): 60–250 (at IC = 100mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

  • The CBC337-25 is a low-power, high-gain NPN transistor designed for amplification and switching applications.
  • It is commonly used in audio amplifiers, signal processing, and general electronic circuits.
  • The "25" suffix indicates a specific hFE (gain) range within the CBC337 series.

Features:

  • High Current Gain (hFE): Provides good signal amplification.
  • Low Noise: Suitable for audio and RF applications.
  • Fast Switching Speed: Useful for digital and switching circuits.
  • Compact TO-92 Package: Easy to mount on PCBs.

This transistor is a direct equivalent to other industry-standard NPN transistors like the 2N2222A or BC337-25, depending on the application requirements.

(Note: Always refer to the manufacturer’s datasheet for precise electrical characteristics and application guidelines.)

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