Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > others07 > D1106S

D1106S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D1106S100Yes

D1106S** is a semiconductor device, typically a **thyristor (SCR)** or **triac**, manufactured by **STMicroelectronics**.

The D1106S is a semiconductor device, typically a thyristor (SCR) or triac, manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features:

Manufacturer:

  • STMicroelectronics

Specifications (General):

  • Type: Thyristor (SCR) or Triac (depending on variant)
  • Voltage Rating: Typically 600V (exact value may vary by variant)
  • Current Rating: Around 10A (exact value may vary by variant)
  • Package: TO-220AB (standard through-hole package)
  • Gate Trigger Current (Igt): Low trigger current for efficient switching
  • Repetitive Peak Off-State Voltage (VDRM): Up to 600V
  • On-State Voltage (VTM): Low forward voltage drop

Descriptions:

  • Designed for AC power control applications.
  • Used in switching, motor control, lighting, and heating systems.
  • Robust construction for high reliability in industrial and consumer electronics.

Features:

  • High voltage capability (600V).
  • Low gate trigger current for improved efficiency.
  • High surge current capability for robustness.
  • Isolated tab (for some variants) for easier heat sinking.
  • TO-220 package for easy mounting and heat dissipation.

For exact specifications, refer to the official datasheet from STMicroelectronics.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • 2SA1499 ,187,TO220F

    2SA1499 is a PNP silicon transistor manufactured by Panasonic.

  • IRF50N06 ,100,TO220

    IRF50N06** is an N-channel power MOSFET manufactured by various semiconductor companies, including Infineon and others.

  • HMC617LP3E ,2000,QFN

    HMC617LP3E** is a high-performance GaAs MMIC Low Noise Amplifier (LNA) manufactured by **Hittite Microwave Corporation** (now part of Analog Devices).

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales