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IRF50N06 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRF50N06100Yes

IRF50N06** is an N-channel power MOSFET manufactured by various semiconductor companies, including Infineon and others.

The IRF50N06 is an N-channel power MOSFET manufactured by various semiconductor companies, including Infineon and others. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A (at 25°C)
  • Pulsed Drain Current (IDM): 200A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 150W (at 25°C)
  • On-Resistance (RDS(on)): 0.028Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Input Capacitance (Ciss): 2000pF (typical)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-220AB

Descriptions:

  • The IRF50N06 is a power MOSFET designed for high-current switching applications.
  • It is commonly used in power supplies, motor control, DC-DC converters, and automotive systems.
  • The device features low on-resistance and fast switching speeds, making it efficient for power management.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current handling capability (up to 50A continuous).
  • Fast switching performance for efficient power conversion.
  • Avalanche energy rated for ruggedness in inductive load applications.
  • TO-220 package for easy mounting and heat dissipation.

This MOSFET is widely used in industrial, automotive, and consumer electronics applications requiring high power efficiency.

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