Professional IC Distribution & Technical Solutions

The IXTA52P10P is a power MOSFET manufactured by IXYS. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: IXYS
• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 100V
• Continuous Drain Current (I_D): 52A
• Pulsed Drain Current (I_DM): 208A
• Power Dissipation (P_D): 300W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.025Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 2V (min) - 4V (max)
• Input Capacitance (C_iss): 3000pF (typ)
• Output Capacitance (C_oss): 700pF (typ)
• Reverse Transfer Capacitance (C_rss): 100pF (typ)
• Package: TO-247

Descriptions:

• The IXTA52P10P is a high-performance N-Channel MOSFET designed for power switching applications.
• It features low on-resistance (R_DS(on)) and high current handling capability, making it suitable for high-efficiency power conversion.
• The device is optimized for fast switching and low conduction losses in applications such as motor drives, power supplies, and inverters.

Features:

• High current capability (52A continuous, 208A pulsed)
• Low R_DS(on) for reduced conduction losses
• Fast switching performance
• High power dissipation (300W)
• Robust TO-247 package for efficient thermal management
• Suitable for high-voltage (100V) applications

This MOSFET is commonly used in switching regulators, DC-DC converters, motor control, and industrial power systems.