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S1NB60 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
S1NB60SHING105Yes

S1NB60** is a Schottky Barrier Diode (SBD) manufactured by **SHING**.

The S1NB60 is a Schottky Barrier Diode (SBD) manufactured by SHING. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Type: Schottky Barrier Diode (SBD)
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Maximum Reverse Voltage (VR): 60V
  • Forward Voltage Drop (VF): 0.55V (typical at 1A)
  • Reverse Leakage Current (IR): 0.5mA (maximum at VR = 60V)
  • Operating Junction Temperature (TJ): -55°C to +125°C
  • Storage Temperature Range (TSTG): -55°C to +150°C

Descriptions:

  • The S1NB60 is a high-efficiency Schottky diode designed for low-power switching applications.
  • It features a low forward voltage drop and fast switching characteristics, making it suitable for rectification and power management circuits.
  • The diode is housed in a DO-41 package, which is a standard axial-lead package for through-hole mounting.

Features:

  • Low Forward Voltage Drop: Enhances efficiency in power conversion.
  • Fast Switching Speed: Reduces switching losses in high-frequency applications.
  • High Surge Current Capability: Withstands transient overloads.
  • Low Reverse Leakage Current: Improves power efficiency.
  • RoHS Compliant: Meets environmental standards.

For detailed electrical characteristics and performance curves, refer to the official SHING datasheet.

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