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2SA1661 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1661JIANGSU1000Yes

2SA1661 is a PNP silicon transistor manufactured by JIANGSU.

The 2SA1661 is a PNP silicon transistor manufactured by JIANGSU. Its key specifications include:

  • Collector-Base Voltage (VCBO): -120V
  • Collector-Emitter Voltage (VCEO): -120V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320
  • Transition Frequency (fT): 80MHz
  • Package: TO-92

These specifications are typical for the 2SA1661 transistor as provided by JIANGSU.

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