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BLG40T120FUH-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BLG40T120FUH-FBELLING 6883Yes

BLG40T120FUH-F** is a power semiconductor device manufactured by **BELLING**.

The BLG40T120FUH-F is a power semiconductor device manufactured by BELLING. Below are its key specifications, descriptions, and features:

Specifications:

  • Device Type: IGBT (Insulated Gate Bipolar Transistor) with Diode
  • Voltage Rating (Vces): 1200V
  • Current Rating (Ic): 40A
  • Power Dissipation (Pd): 200W
  • Gate-Emitter Voltage (Vge): ±20V
  • Collector-Emitter Saturation Voltage (Vce(sat)): 2.0V (typical)
  • Switching Speed: Fast switching with low losses
  • Package Type: TO-247
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The BLG40T120FUH-F is a high-voltage IGBT module designed for power switching applications.
  • It integrates a freewheeling diode for improved efficiency in inductive load circuits.
  • Suitable for inverters, motor drives, UPS systems, and industrial power supplies.

Features:

  • Low Vce(sat): Ensures reduced conduction losses.
  • Fast Switching: Enhances efficiency in high-frequency applications.
  • High Voltage Capability: Supports up to 1200V for robust performance.
  • Built-in Diode: Simplifies circuit design by eliminating the need for an external diode.
  • TO-247 Package: Provides good thermal dissipation and mechanical strength.

This device is optimized for high-power applications requiring efficient switching and thermal performance.

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