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VM08X Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
VM08XMOSI100Yes

VM08X** is a power MOSFET manufactured by **MOSI**.

The VM08X is a power MOSFET manufactured by MOSI. Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 80A
  • Pulsed Drain Current (IDM): 320A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 8mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Input Capacitance (Ciss): 3000pF (typ)
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220

Description:

The VM08X is a high-performance N-Channel MOSFET designed for power switching applications. It offers low on-resistance and high current handling, making it suitable for motor control, power supplies, and DC-DC converters.

Features:

  • Low RDS(on) for high efficiency
  • High current capability
  • Fast switching speed
  • Avalanche energy specified
  • Improved thermal performance
  • RoHS compliant

For detailed application notes or additional parameters, refer to the official MOSI datasheet.

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