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L8050HQLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L8050HQLT1GLRC29100Yes

L8050HQLT1G** is a **NPN Bipolar Junction Transistor (BJT)** manufactured by **LRC (Leshan Radio Company)**.

The L8050HQLT1G is a NPN Bipolar Junction Transistor (BJT) manufactured by LRC (Leshan Radio Company).

Key Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCE): 25V
  • Collector-Base Voltage (VCB): 40V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 1.5A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 120 - 400
  • Transition Frequency (fT): 150MHz
  • Package: SOT-23 (Surface Mount)
  • Operating Temperature Range: -55°C to +150°C

Features:

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Small SOT-23 package for space-saving designs
  • Suitable for general-purpose amplification and switching applications

Applications:

  • Signal amplification
  • Switching circuits
  • Driver stages
  • Audio amplifiers
  • Power management circuits

This transistor is commonly used in consumer electronics, industrial controls, and communication devices.

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    L8050HQLT1G** is a **NPN Bipolar Junction Transistor (BJT)** manufactured by **LRC (Leshan Radio Company)**.

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