Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > DIODES > DMN65D8LDW-7

DMN65D8LDW-7 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
DMN65D8LDW-7DIODES18000Yes

DMN65D8LDW-7** is a **N-Channel MOSFET** manufactured by **DIODES Incorporated**.

The DMN65D8LDW-7 is a N-Channel MOSFET manufactured by DIODES Incorporated.

Key Specifications:

  • Voltage Rating (VDS): 60V
  • Current Rating (ID): 65A (continuous)
  • RDS(ON) (Max): 8.0mΩ (at VGS = 10V)
  • Gate Threshold Voltage (VGS(th)): 2.0V (typical)
  • Power Dissipation (PD): 125W
  • Package: TO-252 (DPAK)

Features:

  • Low on-resistance (RDS(ON)) for high efficiency
  • Fast switching performance
  • Avalanche energy specified for ruggedness
  • Lead-free and RoHS compliant

This MOSFET is designed for power management applications, including DC-DC converters, motor control, and load switching.

Would you like additional details on any specific parameter?

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • ZXTN2010ZTA ,10650,SOT-89-3ECCN: EAR99

    ZXTN2010ZTA** is an NPN bipolar junction transistor (BJT) manufactured by **DIODES Incorporated**.

  • S3DB-13-F ,4480,SOTECCN: EAR99

    S3DB-13-F** is a Schottky barrier diode manufactured by **DIODES Incorporated**.

  • DMN6040SVTQ-7 ,102000, SOT23-6

    DMN6040SVTQ-7** is a power MOSFET manufactured by **Diodes Incorporated**.

  • CXA2093S,sony,75,DIP22

    SA555N,ST,75,DIP8

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales