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AH284 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
AH284DIODES175Yes

AH284** is a **P-Channel Enhancement Mode Field Effect Transistor (FET)** manufactured by **DIODES Incorporated**.

The AH284 is a P-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by DIODES Incorporated.

Specifications:

  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5.5A
  • Pulsed Drain Current (IDM): -22A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(ON)): 50mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

  • The AH284 is a P-Channel MOSFET designed for low-voltage, high-efficiency switching applications.
  • It is optimized for power management in portable electronics, battery protection, and load switching.

Features:

  • Low On-Resistance (RDS(ON)) for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • Small SOT-23 package for space-constrained designs.
  • RoHS compliant and halogen-free.

For detailed electrical characteristics and application notes, refer to the official DIODES Incorporated datasheet.

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