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ES1D-13-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
ES1D-13-FDIODES5000Yes

ES1D-13-F is a Schottky barrier rectifier diode manufactured by DIODES Incorporated.

The ES1D-13-F is a Schottky barrier rectifier diode manufactured by DIODES Incorporated. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Manufacturer: DIODES Incorporated
  • Type: Schottky Barrier Rectifier Diode
  • Package: SMA (DO-214AC)
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (8.3ms single half-sine-wave)
  • Maximum Reverse Voltage (VRRM): 40V
  • Forward Voltage Drop (VF): 0.55V (at 1A)
  • Reverse Leakage Current (IR): 0.5mA (at 40V)
  • Operating Junction Temperature (TJ): -65°C to +125°C
  • Storage Temperature Range (TSTG): -65°C to +150°C

Descriptions:

  • The ES1D-13-F is a high-efficiency Schottky diode designed for low-power switching applications.
  • It features a low forward voltage drop and fast switching characteristics, making it suitable for power supply and DC-DC converter applications.
  • The SMA package provides a compact footprint for space-constrained designs.

Features:

  • Low Forward Voltage Drop: Ensures minimal power loss.
  • Fast Switching Speed: Improves efficiency in high-frequency circuits.
  • High Surge Current Capability: Enhances reliability under transient conditions.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This information is based on the manufacturer's datasheet and technical documentation.

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