Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > DIODES > GBJ2506-F

GBJ2506-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
GBJ2506-FDiodes12000Yes

GBJ2506-F is a bridge rectifier manufactured by Diodes Incorporated.

The GBJ2506-F is a bridge rectifier manufactured by Diodes Incorporated. Below are its specifications, descriptions, and features:

Specifications:

  • Type: Single-Phase Bridge Rectifier
  • Maximum Average Forward Current (Io): 25A
  • Peak Forward Surge Current (Ifsm): 350A (8.3ms half-sine)
  • Maximum Reverse Voltage (Vr): 600V
  • Forward Voltage Drop (Vf): 1.1V (typical at 12.5A)
  • Operating Temperature Range: -55°C to +150°C
  • Mounting Type: Through Hole
  • Package: GBJ (4-pin, insulated case)

Descriptions:

  • The GBJ2506-F is a high-current, high-voltage bridge rectifier designed for AC to DC conversion in power supply applications.
  • It features an insulated metal case for improved thermal performance and safety.
  • Suitable for industrial, consumer, and automotive applications.

Features:

  • High Current Capability: Supports up to 25A continuous current.
  • High Voltage Rating: 600V reverse voltage for robust performance.
  • Low Forward Voltage Drop: Enhances efficiency.
  • Insulated Package: Provides electrical isolation and thermal dissipation.
  • UL Recognition: Meets safety standards for component reliability.

This information is based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to Diodes Incorporated's official documentation.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • S3DB-13-F ,4480,SOTECCN: EAR99

    S3DB-13-F** is a Schottky barrier diode manufactured by **DIODES Incorporated**.

  • ZXMP6A17E6TA ,44519,SOT-26ECCN: EAR99

    ZXMP6A17E6TA** is a P-channel enhancement mode MOSFET manufactured by **DIODES Incorporated**.

  • AP2156SG-13 ,7500,SOP-8年份：22+

    AP2156SG-13 is a power distribution switch manufactured by DIODES Incorporated.

  • 2SD473,NEC,70,TO220

    TNY178PN,POWER,70,DIP7

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales