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MMBT2222A-7-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT2222A-7-FDIODES83568Yes

MMBT2222A-7-F** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **DIODES Incorporated**.

The MMBT2222A-7-F is a general-purpose NPN bipolar junction transistor (BJT) manufactured by DIODES Incorporated.

Specifications:

  • Type: NPN Transistor
  • Collector-Emitter Voltage (VCE): 40V
  • Collector-Base Voltage (VCB): 75V
  • Emitter-Base Voltage (VEB): 6V
  • Collector Current (IC): 600mA (continuous)
  • Power Dissipation (PD): 350mW
  • DC Current Gain (hFE): 100 - 300 (at IC = 10mA, VCE = 10V)
  • Transition Frequency (fT): 300MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

The MMBT2222A-7-F is a small-signal transistor designed for general-purpose amplification and switching applications. It is a surface-mount equivalent of the widely used 2N2222 transistor.

Features:

  • High current gain (hFE)
  • Low saturation voltage
  • Fast switching speed
  • Suitable for small-signal and switching applications
  • RoHS compliant

This transistor is commonly used in amplifiers, signal processing, and switching circuits.

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