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MMBT5551-7-F Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT5551-7-FDIODES4110Yes

MMBT5551-7-F** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **DIODES Incorporated**.

The MMBT5551-7-F is a general-purpose NPN bipolar junction transistor (BJT) manufactured by DIODES Incorporated.

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 160V
  • Collector-Emitter Voltage (VCEO): 160V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 600mA
  • Power Dissipation (PD): 350mW
  • DC Current Gain (hFE): 80 to 250 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-pin)

Descriptions:

The MMBT5551-7-F is a high-voltage NPN transistor designed for general-purpose amplification and switching applications. It is suitable for use in low-power circuits where high voltage handling is required.

Features:

  • High voltage capability (VCEO = 160V)
  • Low saturation voltage
  • High current gain (hFE)
  • Small SOT-23 package for space-saving designs
  • RoHS compliant

This transistor is commonly used in power management, signal amplification, and switching circuits.

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