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MB85RS16PNF-G-JNERE1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RS16PNF-G-JNERE1Fujitsu2218Yes

MB85RS16PNF-G-JNERE1** is a FRAM (Ferroelectric Random Access Memory) device manufactured by **Fujitsu**.

The MB85RS16PNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: FRAM (Non-volatile)
  • Density: 16 Kbit (2 K × 8 bits)
  • Interface: SPI (Serial Peripheral Interface)
  • Operating Voltage: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Package: 8-pin SOP (Small Outline Package)
  • Clock Frequency: Up to 5 MHz
  • Standby Current: 5 µA (typical)
  • Active Current: 0.5 mA (typical at 5 MHz)

Descriptions:

  • Non-volatile Memory: Retains data without power, similar to EEPROM or Flash but with faster write speeds.
  • High-Speed SPI Interface: Supports standard SPI modes (0,0 and 1,1).
  • No Write Delays: Unlike Flash or EEPROM, FRAM enables instant writes without delay.
  • Low Power Consumption: Ideal for battery-powered applications.
  • High Reliability: Superior endurance and retention compared to traditional non-volatile memory.

Features:

  • Fast Write Operations: No need for erase cycles before writing.
  • Sector-Free Operation: Data can be written at the byte level.
  • Hardware Write Protection: WP pin for protection against accidental writes.
  • Industrial-Grade: Suitable for harsh environments with extended temperature ranges.
  • RoHS Compliant: Lead-free and environmentally friendly.

This FRAM device is commonly used in applications requiring frequent data logging, real-time data storage, and low-power embedded systems.

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