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MB85RS64PNF-G-JNERE1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MB85RS64PNF-G-JNERE1FUJITSU7340Yes

MB85RS64PNF-G-JNERE1** is a FRAM (Ferroelectric Random Access Memory) device manufactured by **Fujitsu**.

The MB85RS64PNF-G-JNERE1 is a FRAM (Ferroelectric Random Access Memory) device manufactured by Fujitsu. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: FRAM (Non-volatile)
  • Density: 64Kbit (8K x 8-bit)
  • Interface: SPI (Serial Peripheral Interface)
  • Operating Voltage: 2.7V to 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Write Endurance: 10 trillion (10^13) read/write cycles
  • Data Retention: 10 years (at 85°C)
  • Clock Frequency: Up to 25 MHz
  • Package: 8-pin SOP (Small Outline Package)
  • RoHS Compliance: Yes

Descriptions:

  • The MB85RS64PNF-G-JNERE1 is a high-performance FRAM with SPI interface, offering fast read/write operations and high endurance.
  • Unlike traditional EEPROM or Flash, FRAM provides instant non-volatile storage with no write delays.
  • Suitable for applications requiring frequent data writes, such as data logging, metering, and industrial control systems.

Features:

  • No Write Delays: Unlike EEPROM/Flash, FRAM writes data instantly without needing a wait time.
  • High-Speed SPI Interface: Supports up to 25 MHz for fast data transfer.
  • Low Power Consumption: Ideal for battery-powered applications.
  • High Reliability: 10 trillion read/write cycles ensure long-term durability.
  • Industrial-Grade: Operates reliably in harsh environments (-40°C to +85°C).

This FRAM device is commonly used in automotive, industrial, and consumer electronics where fast, non-volatile memory with high endurance is required.

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