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2SA836 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA836HIT125Yes

2SA836** is a PNP bipolar junction transistor (BJT) manufactured by **Hitachi (HIT)**.

The 2SA836 is a PNP bipolar junction transistor (BJT) manufactured by Hitachi (HIT). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 to 320 (varies by grade)
  • Transition Frequency (fT): 80MHz
  • Operating Temperature Range: -55°C to +150°C

Description:

The 2SA836 is a high-voltage, medium-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in audio amplifiers, power regulators, and driver circuits.

Features:

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Reliable performance in various circuit configurations

Package:

  • TO-92 (plastic-encapsulated through-hole package)

For exact performance characteristics, refer to the official Hitachi datasheet or manufacturer documentation.

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