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HA13001 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HA13001HIT400Yes

Manufacturer:** HIT (HIT Semiconductor) **Part Number:** HA13001 ### **Specifications:** - **Type:** Bipolar Junction Transistor (BJT) - **Polarity:** NPN - **Maximum Collector-Emitter Voltage (VCEO):** 30V - **Maximum Collector

Manufacturer: HIT (HIT Semiconductor)

Part Number: HA13001

Specifications:

  • Type: Bipolar Junction Transistor (BJT)
  • Polarity: NPN
  • Maximum Collector-Emitter Voltage (VCEO): 30V
  • Maximum Collector-Base Voltage (VCBO): 40V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 40 to 320 (varies by operating conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The HA13001 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers moderate power handling and high-speed performance, making it suitable for low-power circuits.

Features:

  • High current gain (hFE)
  • Fast switching speed
  • Low saturation voltage
  • Compact TO-92 package
  • Suitable for audio amplification, signal processing, and switching circuits

This information is based on available datasheet specifications. For precise application details, refer to the official HIT Semiconductor documentation.

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