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HY57V281620HCTP-H Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HY57V281620HCTP-HHYNIX672Yes

### **HY57V281620HCTP-H Manufacturer: HYNIX** #### **Specifications:** - **Type:** Synchronous DRAM (SDRAM) - **Density:** 128Mbit (4M x 32-bit) - **Organization:** 4 Banks x 1M words x 32 bits - **Voltage Supply:** 3.

HY57V281620HCTP-H Manufacturer: HYNIX

#### Specifications:

  • Type: Synchronous DRAM (SDRAM)
  • Density: 128Mbit (4M x 32-bit)
  • Organization: 4 Banks x 1M words x 32 bits
  • Voltage Supply: 3.3V (±0.3V)
  • Speed: 7.5ns (133MHz)
  • Interface: LVTTL
  • Package: 86-pin TSOP-II
  • Operating Temperature: Commercial (0°C to +70°C)
  • Refresh Cycles: 4096 (64ms refresh interval)
  • Burst Length: 1, 2, 4, 8, or Full Page
  • CAS Latency: 2, 3

#### Descriptions:

The HY57V281620HCTP-H is a high-speed CMOS SDRAM from HYNIX, designed for applications requiring high-density, low-power, and high-performance memory. It supports programmable burst lengths and operates at 133MHz with a 3.3V power supply.

#### Features:

  • Fully Synchronous Operation with a single 3.3V power supply
  • Auto Refresh & Self Refresh modes
  • Programmable CAS Latency (2 or 3)
  • Burst Read & Write Operations (1, 2, 4, 8, or full page)
  • Auto Precharge & Power-Down Mode
  • Compatible with JEDEC Standard
  • Low Power Consumption

This SDRAM is commonly used in networking, telecommunications, and embedded systems.

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