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07N60S5 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
07N60S5INFINEON255Yes

07N60S5** is a power MOSFET manufactured by **Infineon Technologies**.

The 07N60S5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 600V
  • Continuous Drain Current (ID): 7A
  • Pulsed Drain Current (IDM): 28A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 0.85Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min), 5V (max)
  • Input Capacitance (Ciss): 900pF (typ)
  • Output Capacitance (Coss): 150pF (typ)
  • Reverse Transfer Capacitance (Crss): 40pF (typ)
  • Turn-On Delay Time (td(on)): 12ns (typ)
  • Turn-Off Delay Time (td(off)): 45ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Description:

The 07N60S5 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is part of Infineon’s Super Junction MOSFET series, offering low conduction losses and fast switching performance.

Features:

  • Low On-Resistance (RDS(on)) for reduced conduction losses.
  • Fast Switching Speed for efficient power conversion.
  • High Voltage Capability (600V) suitable for industrial and consumer applications.
  • Avalanche Energy Rated for robustness in harsh conditions.
  • Low Gate Charge (Qg) for improved switching efficiency.
  • TO-220 Package for easy mounting and thermal management.

This MOSFET is commonly used in SMPS (Switched-Mode Power Supplies), motor control, inverters, and lighting applications.

For detailed datasheet information, refer to Infineon’s official documentation.

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