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The 07N60S5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Drain-Source Voltage (V_DS): 600V
• Continuous Drain Current (I_D): 7A
• Pulsed Drain Current (I_DM): 28A
• Power Dissipation (P_D): 125W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 0.85Ω (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 3V (min), 5V (max)
• Input Capacitance (C_iss): 900pF (typ)
• Output Capacitance (C_oss): 150pF (typ)
• Reverse Transfer Capacitance (C_rss): 40pF (typ)
• Turn-On Delay Time (t_d(on)): 12ns (typ)
• Turn-Off Delay Time (t_d(off)): 45ns (typ)
• Operating Temperature Range: -55°C to +150°C

Description:

The 07N60S5 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is part of Infineon’s Super Junction MOSFET series, offering low conduction losses and fast switching performance.

Features:

• Low On-Resistance (R_DS(on)) for reduced conduction losses.
• Fast Switching Speed for efficient power conversion.
• High Voltage Capability (600V) suitable for industrial and consumer applications.
• Avalanche Energy Rated for robustness in harsh conditions.
• Low Gate Charge (Q_g) for improved switching efficiency.
• TO-220 Package for easy mounting and thermal management.

This MOSFET is commonly used in SMPS (Switched-Mode Power Supplies), motor control, inverters, and lighting applications.

For detailed datasheet information, refer to Infineon’s official documentation.