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BCX52-10E6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BCX52-10E6327INFINEON140Yes

BCX52-10E6327** is a PNP bipolar junction transistor (BJT) manufactured by **Infineon Technologies**.

The BCX52-10E6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Key Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCE): -45 V
  • Collector-Base Voltage (VCB): -45 V
  • Emitter-Base Voltage (VEB): -5 V
  • Collector Current (IC): -1 A (continuous)
  • Power Dissipation (Ptot): 1 W
  • DC Current Gain (hFE): 100 to 250 (at IC = -100 mA, VCE = -5 V)
  • Transition Frequency (fT): 100 MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-89

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power applications in consumer electronics, industrial controls, and automotive systems.
  • Features high current gain and low saturation voltage.

Features:

  • High current gain (hFE) for improved efficiency.
  • Low saturation voltage for better power handling.
  • Compact SOT-89 package for space-constrained designs.
  • RoHS compliant (environmentally friendly).

This transistor is commonly used in driver stages, signal amplification, and switching circuits.

(Data sourced from Infineon’s official documentation.)

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