Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > INFINEON > BAT17E6393

BAT17E6393 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BAT17E6393INFINEON1900Yes

BAT17E6393** is a Schottky diode manufactured by **Infineon Technologies**.

The BAT17E6393 is a Schottky diode manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Diode Type: Schottky Diode
  • Package: SOD-323 (Miniature Surface-Mount)
  • Configuration: Single Diode
  • Maximum Reverse Voltage (VR): 20 V
  • Forward Current (IF): 30 mA (continuous)
  • Forward Voltage (VF): 0.38 V (typical at 1 mA)
  • Reverse Current (IR): 0.5 µA (typical at 10 V)
  • Operating Temperature Range: -65°C to +150°C

Descriptions:

  • The BAT17E6393 is a high-performance Schottky diode designed for high-frequency and low-power applications.
  • It features low forward voltage and fast switching characteristics, making it suitable for RF and signal detection circuits.
  • The compact SOD-323 package is ideal for space-constrained PCB designs.

Features:

  • Low Forward Voltage Drop – Enhances efficiency in low-voltage circuits.
  • Fast Switching Speed – Suitable for high-frequency applications.
  • Low Reverse Leakage Current – Improves power efficiency.
  • Miniature Package (SOD-323) – Optimized for surface-mount assembly.
  • High Reliability – Robust performance across a wide temperature range.

This diode is commonly used in RF mixers, detectors, clamping circuits, and high-speed switching applications.

For detailed datasheet information, refer to Infineon’s official documentation.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • BC846BW/T1 ,550,SOT23

    BC846BW/T1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies.

  • IPG20N06S4L-26 ,9399,TDSON-8-4ECCN: EAR99

    IPG20N06S4L-26** is a power MOSFET manufactured by **Infineon Technologies**.

  • BSC010N04LS ,4000,TDSON-8

    Manufacturer:** INFINEON **Part Number:** BSC010N04LS ### **Specifications:** - **Transistor Type:** N-Channel MOSFET - **Technology:** OptiMOS™ - **Drain-Source Voltage (VDS):** 40 V - **Continuous Drain Current (ID):** 100 A - **Pulsed

  • M53214P,MIT,44,DIP14

    TC9310N-033,TOS,44,DIP28

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales