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IPG20N06S4L-26 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IPG20N06S4L-26INFINEON9399Yes

IPG20N06S4L-26** is a power MOSFET manufactured by **Infineon Technologies**.

The IPG20N06S4L-26 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: N-Channel Power MOSFET
  • Package: TO-252 (DPAK)
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 20A
  • Pulsed Drain Current (IDM): 80A
  • Power Dissipation (PD): 48W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 26mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) to 4V (max)
  • Total Gate Charge (Qg): 18nC (typ)
  • Input Capacitance (Ciss): 1200pF (typ)
  • Output Capacitance (Coss): 300pF (typ)
  • Reverse Transfer Capacitance (Crss): 60pF (typ)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Optimized for low conduction losses due to low RDS(on).
  • Suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low On-Resistance (RDS(on)) for reduced power dissipation.
  • Fast Switching Speed for high-frequency applications.
  • Avalanche Rugged for improved reliability.
  • Lead-Free & RoHS Compliant for environmental safety.
  • Logic-Level Gate Drive capability (fully enhanced at 4.5V).

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications where high power efficiency and compact packaging are required.

(Note: Always refer to the official Infineon datasheet for precise details before design implementation.)

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