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BCXV47E6327 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BCXV47E6327INFINEON175Yes

BCXV47E6327** is a high-voltage NPN transistor manufactured by **Infineon Technologies**.

The BCXV47E6327 is a high-voltage NPN transistor manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 300 V
  • Collector-Base Voltage (VCBO): 300 V
  • Emitter-Base Voltage (VEBO): 5 V
  • Collector Current (IC): 1 A
  • Power Dissipation (Ptot): 1.25 W
  • DC Current Gain (hFE): 15 to 60 (at IC = 0.1 A, VCE = 5 V)
  • Transition Frequency (fT): 50 MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-89

Descriptions:

The BCXV47E6327 is a high-voltage NPN transistor designed for switching and amplification applications in high-voltage circuits. It is suitable for use in power supplies, inverters, and other electronic systems requiring robust performance.

Features:

  • High collector-emitter voltage (300 V)
  • Medium current capability (1 A)
  • Low saturation voltage for efficient switching
  • High transition frequency (50 MHz) for fast switching
  • Compact SOT-89 package for space-saving designs

This information is based on Infineon's official datasheet. For detailed performance characteristics, refer to the manufacturer's documentation.

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