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BSS83PH6327XTSA1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS83PH6327XTSA1INFINEON15994Yes

BSS83PH6327XTSA1** is a P-channel MOSFET manufactured by **Infineon Technologies**.

The BSS83PH6327XTSA1 is a P-channel MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Transistor Type: P-Channel MOSFET
  • Package: SOT-23 (SC-59)
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -1.3A
  • Power Dissipation (Ptot): 330mW
  • On-Resistance (RDS(on)): 120mΩ (at VGS = -4.5V)
  • Threshold Voltage (VGS(th)): -0.8V (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low-voltage switching applications
  • Low on-resistance for efficient power management
  • Optimized for fast switching and high efficiency
  • Suitable for battery-powered devices, load switches, and power management circuits

Features:

  • Low threshold voltage for compatibility with logic-level signals
  • Low gate charge for fast switching performance
  • Lead-free and RoHS compliant
  • AEC-Q101 qualified (for automotive applications)

This MOSFET is commonly used in portable electronics, power supplies, and automotive applications where space and efficiency are critical.

For detailed datasheets, refer to Infineon’s official documentation.

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