Professional IC Distribution & Technical Solutions

The IPT012N08N5 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IPT012N08N5
• Technology: N-Channel Power MOSFET
• Package: TO-Leadless (D²PAK)
• Drain-Source Voltage (V_DS): 80 V
• Continuous Drain Current (I_D): 120 A (at 25°C)
• Pulsed Drain Current (I_DM): 480 A
• R_DS(on) (Max): 1.2 mΩ (at V_GS = 10 V)
• Gate-Source Voltage (V_GS): ±20 V
• Power Dissipation (P_D): 375 W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Gate Charge (Q_G): 170 nC (typical)
• Input Capacitance (C_iss): 12,000 pF
• Output Capacitance (C_oss): 2,100 pF
• Reverse Transfer Capacitance (C_rss): 400 pF

Descriptions:

• The IPT012N08N5 is a high-performance N-Channel MOSFET designed for high-current and low-loss switching applications.
• It features OptiMOS™ 5 technology, providing low on-state resistance (R_DS(on)) and high efficiency.
• The TO-Leadless (D²PAK) package offers improved thermal performance and power dissipation.

Features:

• Low R_DS(on) for reduced conduction losses.
• High current capability (120 A continuous, 480 A pulsed).
• Optimized for switching applications with low gate charge (Q_G).
• Robust and reliable with a wide operating temperature range.
• Suitable for automotive and industrial applications due to high power handling.

This MOSFET is commonly used in DC-DC converters, motor control, power supplies, and automotive systems.