Professional IC Distribution & Technical Solutions

The IPW60R037P7 is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IPW60R037P7
• Type: N-Channel Power MOSFET
• Technology: CoolMOS™ P7
• Voltage Rating (VDS): 600V
• Current Rating (ID): 37A (at 25°C)
• On-Resistance (RDS(on)): 37mΩ (max at VGS = 10V)
• Gate-Source Voltage (VGS): ±20V
• Power Dissipation (PD): 330W
• Package: TO-247
• Operating Temperature Range: -55°C to +150°C

Descriptions:

The IPW60R037P7 is a high-voltage N-Channel MOSFET from Infineon's CoolMOS™ P7 series, optimized for high efficiency and low switching losses. It is designed for applications requiring high power density and reliability, such as power supplies, inverters, and motor drives.

Features:

• Low On-Resistance (RDS(on)): Minimizes conduction losses.
• Fast Switching Performance: Reduces switching losses in high-frequency applications.
• High Current Capability: Supports up to 37A continuous current.
• Optimized for Hard-Switching Topologies: Suitable for SMPS, PFC, and DC-DC converters.
• Avalanche Energy Specified: Enhances ruggedness in demanding conditions.
• Low Gate Charge (Qg): Improves efficiency in high-frequency switching.
• TO-247 Package: Ensures high power handling and thermal performance.

This MOSFET is ideal for industrial, automotive, and renewable energy applications where high efficiency and robustness are critical.

(Note: Always refer to the official Infineon datasheet for detailed electrical characteristics and application guidelines.)