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IRFB3607PBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFB3607PBFINFINEON25900Yes

IRFB3607PBF** is a power MOSFET manufactured by **Infineon Technologies**.

The IRFB3607PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRFB3607PBF
  • Type: N-Channel Power MOSFET
  • Technology: HEXFET®
  • Package: TO-220AB
  • Drain-Source Voltage (VDS): 75V
  • Continuous Drain Current (ID): 82A (at 25°C)
  • Pulsed Drain Current (IDM): 330A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 300W (at 25°C)
  • On-Resistance (RDS(on)): 4.3mΩ (max at VGS = 10V)
  • Total Gate Charge (Qg): 150nC (typical)
  • Threshold Voltage (VGS(th)): 2V (min) – 4V (max)
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

  • The IRFB3607PBF is a high-performance N-channel MOSFET designed for power switching applications.
  • It features low on-resistance (RDS(on)) and high current handling capability, making it suitable for high-efficiency power conversion.
  • The TO-220AB package provides robust thermal performance and mechanical durability.

Features:

  • Low RDS(on): Ensures minimal conduction losses.
  • Fast Switching: Optimized for high-frequency applications.
  • High Current Capability: Supports high-power applications.
  • Avalanche Rated: Provides ruggedness under transient conditions.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in DC-DC converters, motor control, power supplies, and automotive applications.

*(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)*

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