Professional IC Distribution & Technical Solutions

The IRFB3607PBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

• Manufacturer: Infineon Technologies
• Part Number: IRFB3607PBF
• Type: N-Channel Power MOSFET
• Technology: HEXFET®
• Package: TO-220AB
• Drain-Source Voltage (V_DS): 75V
• Continuous Drain Current (I_D): 82A (at 25°C)
• Pulsed Drain Current (I_DM): 330A
• Gate-Source Voltage (V_GS): ±20V
• Power Dissipation (P_D): 300W (at 25°C)
• On-Resistance (R_DS(on)): 4.3mΩ (max at V_GS = 10V)
• Total Gate Charge (Q_g): 150nC (typical)
• Threshold Voltage (V_GS(th)): 2V (min) – 4V (max)
• Operating Temperature Range: -55°C to +175°C

Descriptions:

• The IRFB3607PBF is a high-performance N-channel MOSFET designed for power switching applications.
• It features low on-resistance (R_DS(on)) and high current handling capability, making it suitable for high-efficiency power conversion.
• The TO-220AB package provides robust thermal performance and mechanical durability.

Features:

• Low R_DS(on): Ensures minimal conduction losses.
• Fast Switching: Optimized for high-frequency applications.
• High Current Capability: Supports high-power applications.
• Avalanche Rated: Provides ruggedness under transient conditions.
• Lead-Free & RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in DC-DC converters, motor control, power supplies, and automotive applications.

*(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)*