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IRFR024NTRPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFR024NTRPBFINFINEON22300Yes

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

The IRFR024NTRPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: IRFR024NTRPBF
  • Type: N-Channel MOSFET
  • Package: TO-252 (DPAK)
  • Drain-Source Voltage (VDS): 55V
  • Continuous Drain Current (ID): 17A
  • Pulsed Drain Current (IDM): 68A
  • Power Dissipation (PD): 45W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.027Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V to 4V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature Range: -55°C to +175°C

Descriptions:

  • The IRFR024NTRPBF is a N-Channel MOSFET designed for high-efficiency power switching applications.
  • It features low on-resistance (RDS(on)) and fast switching performance, making it suitable for DC-DC converters, motor control, and power management circuits.
  • The TO-252 (DPAK) package provides good thermal performance and is commonly used in surface-mount applications.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current handling capability (17A continuous, 68A pulsed).
  • Fast switching speed for efficient power conversion.
  • Avalanche energy rated for ruggedness in inductive load applications.
  • Lead-free and RoHS compliant.

This MOSFET is widely used in power supplies, motor drives, and battery management systems due to its reliability and performance.

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