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IRLR8726TRPBF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRLR8726TRPBFINFINEON10000Yes

Part Number:** IRLR8726TRPBF **Manufacturer:** Infineon ### **Specifications:** - **Transistor Type:** N-Channel HEXFET Power MOSFET - **Drain-Source Voltage (VDS):** 30V - **Continuous Drain Current (ID):** 62A (at 25°C) - **Pulsed Drain C

Part Number: IRLR8726TRPBF

Manufacturer: Infineon

Specifications:

  • Transistor Type: N-Channel HEXFET Power MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 62A (at 25°C)
  • Pulsed Drain Current (IDM): 250A
  • Power Dissipation (PD): 79W (at 25°C)
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.3mΩ (max at VGS = 10V)
  • Threshold Voltage (VGS(th)): 1V (min), 2.35V (max)
  • Input Capacitance (Ciss): 1860pF (typical)
  • Output Capacitance (Coss): 560pF (typical)
  • Reverse Transfer Capacitance (Crss): 70pF (typical)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: TO-252 (DPAK)

Descriptions:

The IRLR8726TRPBF is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for high-efficiency power conversion, motor control, and load switching.

Features:

  • Low RDS(on) for Reduced Conduction Losses
  • High Current Handling Capability
  • Fast Switching Performance
  • Avalanche Energy Rated
  • Lead-Free, RoHS Compliant
  • Optimized for Synchronous Rectification

This MOSFET is commonly used in DC-DC converters, battery management systems, and automotive applications.

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