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BSS308PEH6327XTSA1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS308PEH6327XTSA1INFINEON27589Yes

BSS308PEH6327XTSA1** is a P-channel MOSFET manufactured by **Infineon Technologies**.

The BSS308PEH6327XTSA1 is a P-channel MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Infineon Technologies
  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -3.8A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(on)): 85mΩ (max) @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Package: SOT-23 (SC-59)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low-voltage switching applications.
  • Optimized for high efficiency and low power loss.
  • Suitable for battery management, power switches, and load switching.

Features:

  • Low On-Resistance (RDS(on)) for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • Compact SOT-23 package for space-constrained designs.
  • Enhanced thermal performance for reliable operation.

For detailed datasheet and application notes, refer to Infineon's official documentation.

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