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B1366 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
B1366KEC122Yes

Part B1366 Manufacturer: KEC** ### **Specifications:** - **Type:** NPN Epitaxial Planar Transistor - **Collector-Emitter Voltage (VCEO):** 50V - **Collector-Base Voltage (VCBO):** 60V - **Emitter-Base Voltage (VEBO):** 5V - **Collector Curr

Part B1366 Manufacturer: KEC

Specifications:

  • Type: NPN Epitaxial Planar Transistor
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1A
  • Power Dissipation (PD): 1W
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The KEC B1366 is a general-purpose NPN bipolar junction transistor (BJT) designed for amplification and switching applications. It features high current gain, low saturation voltage, and fast switching speeds, making it suitable for various electronic circuits.

Features:

  • High Current Gain (hFE): Ensures efficient signal amplification.
  • Low Saturation Voltage: Improves power efficiency in switching applications.
  • Fast Switching Speed: Suitable for high-frequency operations.
  • Epitaxial Planar Construction: Enhances reliability and performance.
  • Compact Package (TO-92): Easy to integrate into circuit designs.

This transistor is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications.

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