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MDT2005ES Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MDT2005ESMDT128Yes

MDT2005ES** is a power MOSFET transistor manufactured by **MDT (Microdiode Electronics Inc.

The MDT2005ES is a power MOSFET transistor manufactured by MDT (Microdiode Electronics Inc.). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDSS): 20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): 5A
  • Pulsed Drain Current (IDM): 20A
  • Power Dissipation (PD): 2W
  • On-Resistance (RDS(ON)): 0.05Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 500pF (typ)
  • Output Capacitance (Coss): 180pF (typ)
  • Reverse Transfer Capacitance (Crss): 80pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-252 (DPAK) – Surface-mount package with good thermal performance.

Features:

  • Low on-resistance for high efficiency.
  • Fast switching speed for power management applications.
  • Enhanced thermal performance due to DPAK package.
  • Suitable for low-voltage, high-current applications.
  • RoHS compliant.

Applications:

  • Power management in DC-DC converters.
  • Motor control circuits.
  • Battery protection systems.
  • Load switching in portable electronics.

This MOSFET is designed for efficient power handling in compact electronic designs.

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