Professional IC Distribution & Technical Solutions

The 2SA1152 is a PNP silicon epitaxial planar transistor manufactured by NEC. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: PNP
• Material: Silicon (Si)
• Maximum Collector-Base Voltage (V_CB): -50V
• Maximum Collector-Emitter Voltage (V_CE): -50V
• Maximum Emitter-Base Voltage (V_EB): -5V
• Collector Current (I_C): -1A
• Total Power Dissipation (P_tot): 1W
• Junction Temperature (T_j): 125°C
• Storage Temperature (T_stg): -55°C to +150°C
• DC Current Gain (h_FE): 60 to 320 (depending on operating conditions)
• Transition Frequency (f_T): 100MHz (typical)

Descriptions:

• The 2SA1152 is a high-speed switching and amplification transistor designed for general-purpose applications.
• It is housed in a TO-92 package, making it suitable for compact circuit designs.
• Suitable for low-power amplification and switching applications in electronic circuits.

Features:

• High DC current gain (h_FE) for efficient signal amplification.
• Low saturation voltage, enhancing switching performance.
• Fast switching speed, making it useful in high-frequency applications.
• Reliable performance in a wide range of operating conditions.

This transistor is commonly used in audio amplifiers, signal processing, and switching circuits.

Would you like additional details on its pin configuration or equivalent alternatives?