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2SB1721(O)-Z-E1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1721(O)-Z-E1NEC8000Yes

2SB1721(O)-Z-E1** is a PNP bipolar junction transistor (BJT) manufactured by **NEC (now part of Renesas Electronics)**.

The 2SB1721(O)-Z-E1 is a PNP bipolar junction transistor (BJT) manufactured by NEC (now part of Renesas Electronics). Below are its key specifications, descriptions, and features based on official NEC documentation:

Manufacturer: NEC (Renesas Electronics)

Type: PNP Silicon Epitaxial Planar Transistor

Key Specifications:

  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Collector Dissipation (PC): 25W (at Ta=25°C)
  • Junction Temperature (Tj): 150°C
  • DC Current Gain (hFE): 60–320 (at VCE=-5V, IC=-1A)
  • Transition Frequency (fT): 20MHz (min)

Features:

  • High current capability (up to 3A)
  • Low saturation voltage (VCE(sat) = -0.5V max at IC=-1A, IB=-0.2A)
  • High power dissipation (25W)
  • Designed for general-purpose amplification and switching applications

Package: TO-220 (Z-type)

Applications:

  • Power amplification
  • Switching circuits
  • Motor control
  • Audio amplifiers

For detailed electrical characteristics and performance curves, refer to the NEC datasheet.

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