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2SC2688M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC2688MNEC500Yes

2SC2688M** is a high-frequency NPN bipolar junction transistor (BJT) manufactured by **NEC**.

The 2SC2688M is a high-frequency NPN bipolar junction transistor (BJT) manufactured by NEC.

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCBO): 30V
  • Collector-Emitter Voltage (VCEO): 20V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 300mW
  • Transition Frequency (fT): 1.5GHz (typical)
  • Gain Bandwidth Product: High (suitable for RF applications)
  • Package: TO-92 (plastic encapsulation)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and VHF applications.
  • Low noise performance, making it suitable for communication circuits.
  • Small-signal amplification in oscillators, mixers, and tuners.
  • High-speed switching capability.
  • Low saturation voltage, improving efficiency in switching applications.

This transistor is commonly used in radio frequency (RF) circuits, wireless communication devices, and other high-frequency electronic systems.

Would you like additional details on pin configuration or equivalent alternatives?

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