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2SD1513 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1513NEC500Yes

2SD1513 is a silicon NPN epitaxial planar transistor manufactured by NEC.

The 2SD1513 is a silicon NPN epitaxial planar transistor manufactured by NEC. It is designed for use in high-speed switching and amplification applications. Key specifications include:

  • Collector-Emitter Voltage (VCEO): 150V
  • Collector-Base Voltage (VCBO): 150V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 1.5A
  • Total Power Dissipation (PT): 20W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at IC = 0.5A, VCE = 5V)
  • Transition Frequency (fT): 50MHz (at IC = 0.5A, VCE = 5V, f = 100MHz)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V (max) (at IC = 1.5A, IB = 0.15A)

The transistor is packaged in a TO-220AB package, which is suitable for through-hole mounting. It is commonly used in power amplification and switching circuits.

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