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UPA609T-T2 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPA609T-T2NEC433Yes

UPA609T-T2** is a high-frequency, low-noise amplifier (LNA) transistor manufactured by **NEC**.

The UPA609T-T2 is a high-frequency, low-noise amplifier (LNA) transistor manufactured by NEC.

Specifications:

  • Type: N-Channel GaAs MESFET
  • Frequency Range: DC to 6 GHz
  • Noise Figure: 0.6 dB (typical at 2 GHz)
  • Gain: 13 dB (typical at 2 GHz)
  • VDS (Drain-Source Voltage): 3 V
  • IDSS (Drain-Saturation Current): 30 mA (typical)
  • Package: SOT-343 (4-pin)

Descriptions:

  • Designed for low-noise amplification in RF and microwave applications.
  • Suitable for mobile communication, satellite receivers, and wireless systems.
  • Features high gain and low noise for improved signal integrity.

Features:

  • Low noise figure for enhanced sensitivity.
  • High gain for improved signal amplification.
  • Compact SOT-343 package for space-constrained designs.
  • Broadband performance (DC to 6 GHz).

For detailed electrical characteristics, refer to NEC's official datasheet.

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