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UPC814G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UPC814GNEC994Yes

UPC814G Manufacturer: NEC** ### **Specifications:** - **Type:** Silicon NPN Transistor - **Package:** TO-92 - **Polarity:** NPN - **Maximum Collector-Base Voltage (VCBO):** 60V - **Maximum Collector-Emitter Voltage (VCEO):** 50V - **Maxim

UPC814G Manufacturer: NEC

Specifications:

  • Type: Silicon NPN Transistor
  • Package: TO-92
  • Polarity: NPN
  • Maximum Collector-Base Voltage (VCBO): 60V
  • Maximum Collector-Emitter Voltage (VCEO): 50V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Total Power Dissipation (PT): 625mW
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE): 80–250 (varies by batch)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The UPC814G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by NEC. It is designed for low-power amplification and switching applications. Its compact TO-92 package makes it suitable for use in consumer electronics, signal processing, and small electronic circuits.

Features:

  • High current gain (hFE) for signal amplification
  • Low noise performance
  • Fast switching speed
  • Reliable and stable operation
  • Suitable for low-voltage applications

This transistor is commonly used in audio amplifiers, signal processing circuits, and switching applications.

*(Note: Always refer to the official datasheet for precise electrical characteristics and application guidelines.)*

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