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K18NQ03 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
K18NQ03NXP438Yes

Manufacturer:** NXP Semiconductors **Part Number:** K18NQ03 ### **Specifications:** - **Type:** N-Channel MOSFET - **Technology:** TrenchMOS - **Drain-Source Voltage (VDS):** 30V - **Continuous Drain Current (ID):** 1

Manufacturer: NXP Semiconductors

Part Number: K18NQ03

Specifications:

  • Type: N-Channel MOSFET
  • Technology: TrenchMOS
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 18A
  • Pulsed Drain Current (IDM): 72A
  • Power Dissipation (Ptot): 45W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)):
  • 8.5mΩ (max) at VGS = 10V
  • 10mΩ (max) at VGS = 4.5V
  • Threshold Voltage (VGS(th)): 1.0V (min) – 2.5V (max)
  • Total Gate Charge (Qg): 20nC (typical)
  • Package: TO-252 (DPAK)

Descriptions:

The K18NQ03 is an N-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and power management circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching capability
  • High current handling
  • Robust and reliable TrenchMOS technology
  • Suitable for automotive and industrial applications
  • Lead-free and RoHS compliant

For detailed electrical characteristics, refer to the official NXP datasheet.

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