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2N3904TA Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N3904TAON6880Yes

2N3904TA** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The 2N3904TA is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Base Voltage (VCB): 60V
  • Collector-Emitter Voltage (VCE): 40V
  • Emitter-Base Voltage (VEB): 6V
  • Collector Current (IC): 200mA (continuous)
  • Power Dissipation (PD): 625mW
  • DC Current Gain (hFE): 100–300 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 300MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

The 2N3904TA is a widely used NPN transistor suitable for amplification and switching applications. It is designed for low-power, medium-speed operations and is commonly used in signal amplification, oscillator circuits, and digital switching.

Features:

  • High current gain (hFE) for efficient signal amplification
  • Low noise performance for audio applications
  • Fast switching speed for digital circuits
  • Compact TO-92 package for easy PCB mounting
  • Reliable performance across a wide temperature range

This transistor is RoHS compliant and adheres to industry-standard specifications.

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